| 000 | 00865nam a22002537a 4500 | ||
|---|---|---|---|
| 005 | 20240723120336.0 | ||
| 008 | 830101s1983 nyua g 001 0 eng | ||
| 020 | _a0471092088 | ||
| 040 |
_aUniversiti Teknology Brunei _beng _cutb |
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| 084 | _aTK7871.96 WAR 1983 | ||
| 100 | 1 | _aWarner, R. M. | |
| 245 | 1 | 0 |
_aTransistors : _bfundamentals for the integrated-circuit engineer / _cR.M. Warner, Jr., B.L. Grung. |
| 260 |
_aNew York : _bJohn Wiley & Sons, _c1983 |
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| 300 |
_axix, 875 p. : _bill. ; _c24 cm. |
||
| 500 | _a"A Wiley-Interscience publication." | ||
| 504 | _aIncludes bibliographical references and indexes. | ||
| 650 | 0 | _aBipolar transistors. | |
| 650 | 0 | _aMetal oxide semiconductor field-effect transistors. | |
| 700 | 1 | _aGrung, B. L. | |
| 942 |
_2lc _cGC |
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| 998 |
_eBook _s805792 : 661 c.1 UTB |
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| 999 |
_c11488 _d11488 |
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